| PART |
Description |
Maker |
| IRF6643PBF |
Latest MOSFET silicon technology
|
International Rectifier
|
| APT35GN120B APT35GN120BG APT35GN120S APT35GN120SG |
Utilizing the latest Non-Punch Through (NPT) Field Stop technology
|
Microsemi Corporation
|
| STP180N55F3 |
This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology whic
|
ST Microelectronics, Inc.
|
| IRF6621 |
The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
|
IRF[International Rectifier]
|
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| UGSA12J |
GPP-TO Pack: TO-220AC
|
GULF SEMI
|
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
1A GENERAL PURPOSE GPP DIODES
|
LRC[Leshan Radio Company]
|
| GF1JS |
GPP SURFACE MOUNT RECTIFIER
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| 1.5KE-10 1.5KE-100 1.5KE-100A 1.5KE 1.5KE-10A 1.5K |
6.8V to 400V GPP TRANSIENT VOLTAGE SUPPRESSORS
|
First Components International
|
| 1N5406G 1B5400G 1N5400G 1N5401G 1N5402G 1N5403G 1N |
3A GENERAL PURPOSE GPP DIODES 3A条一般用途的玻璃钝化二极
|
LRC[Leshan Radio Company]
Leshan Radio Company, Ltd.
|
| T4ARBU405M10 |
TRANSIENT VOLTAGE SUPPRESSORS GPP BRIDGE RECTIFIER
|
Rectron Semiconductor
|
| PIC18F4580 PIC18F2580 PIC18F2480 18F258 PIC18F2580 |
28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology 10-Bit A/D and nanoWatt Technology
(PIC18F2480 / 2580 / 4480 / 4580) Enhanced Flash Microcontrollers
Microcontroller - Datasheet Reference
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc
|
